| Autor: |
Nathan C. Palmquist, Jared A. Kearns, Stephen Gee, Arturo Juan, Srinivas Gandrothula, Michael Lam, Steven P. Denbaars, Shuji Nakamura |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Applied Physics Express, Vol 17, Iss 1, p 016504 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
1882-0786 |
| DOI: |
10.35848/1882-0786/ad119b |
| Popis: |
We report long cavity (65 λ ) GaN-based vertical-cavity surface-emitting lasers (VCSELs) with a topside dielectric concave mirror, an ion implanted current aperture, and a bottomside nanoporous GaN distributed Bragg reflector. Under pulsed operation, a VCSEL with a 10 μ m aperture and a curved mirror with a radius of curvature of 120 μ m had a threshold current density of 14 kA cm ^−2 , and a maximum output power of 370 μ W for a lasing mode at 404.5 nm. The longitudinal performance has a side-mode suppression ratio of 30 dB up to a current density of approximately 40 kA cm ^−2 . Multiple transverse mode profiles are observed across several devices. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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