| Autor: |
Peng Xiaomei, Zhao Aifeng, Wang Jun |
| Jazyk: |
čínština |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
Dianzi Jishu Yingyong, Vol 44, Iss 8, Pp 31-34 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
0258-7998 |
| DOI: |
10.16157/j.issn.0258-7998.1７4966 |
| Popis: |
Based on the physical structure of 40 nm MOSFETs, this paper establishes a unified MOSFET millimeter-wave noise model to characterize the characteristics of drain-current noise, inducted gate-current noise and cross-correlation noise between them. By introducing the gate overdrive effect into the high frequency noise model so that the uniform models had good smoothness, accuracy and continuity. Finally, the simulation results of the model are compared with the traditional high-frequency noise model, the validity and accuracy of the model are verified by comparing the four-noise parameters of the model with the traditional model and the measured data. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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