| Autor: |
Bing Qiao, Pengfei Dai, Xinxin Yu, Zhonghui Li, Ran Tao, Jianjun Zhou, Rui Shen, Tangsheng Chen |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 12, Pp 51-55 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2023.3347049 |
| Popis: |
This paper presents high performance hydrogen-terminated diamond MOSFETs fabricated on a (111)-oriented single-crystal diamond substrate. The diamond surface was passivated by a high-quality Al2O3 grown by ALD at 350°C as well as a secondary passivation layer Si3N4 deposited by PECVD. After passivation, a low ohmic contact resistance $R_{c}$ of $0.5 \Omega \cdot $ mm was obtained and the 2DHG sheet density was as high as $1.0\times 10\,\,^{\mathrm{ 13}}\,\,{\mathrm{ cm}}^{-2}$ with a corresponding mobility of $104 {\mathrm{ cm}}^{2} /\text{V}\cdot \text{s}$ . The fabricated diamond MOSFET with gate length of $0.5 ~\mu \text{m}$ showcased a high current density of 750 mA/mm, a low on-resistance of $24 \Omega \cdot $ mm, and a high off-state breakdown voltage of 117 V. Thanks to the high current density and low on-resistance, a record high output power density of 2.1 W/mm was achieved at 10 GHz with drain biased at a low voltage of −30 V. These results demonstrate that the output current and output power can be improved by using a (111)-oriented diamond, which is benefit for high-frequency and high-power RF devices. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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