| Autor: |
Xiuyan Li, Akira Toriumi |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2041-1723 |
| DOI: |
10.1038/s41467-020-15753-4 |
| Popis: |
Negative capacitance (NC) effects that could allow steep subthreshold swing (SS) in field-effect transistors (FETs) are still controversially discussed. Here the authors propose a model distinct from the NC concept, taking into account domain flips in multiple-domain ferroelectric/paraelectric gate stack FETs. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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