Low temperature Cu–Cu direct bonding in air ambient by ultrafast surface grain growth

Autor: Yun-Fong Lee, Yu-Chen Huang, Jui-Sheng Chang, Ting-Yi Cheng, Po-Yu Chen, Wei-Chieh Huang, Mei-Hsin Lo, Kuan-Lin Fu, Tse-Lin Lai, Po-Kai Chang, Zhong-Yen Yu, Cheng-Yi Liu
Jazyk: angličtina
Rok vydání: 2024
Předmět:
Zdroj: Royal Society Open Science, Vol 11, Iss 9 (2024)
Druh dokumentu: article
ISSN: 2054-5703
76575454
DOI: 10.1098/rsos.240459
Popis: Fine-grain copper (Cu) films (grain size: 100.36 nm) with a near-atomic-scale surface (0.39 nm) were electroplated. Without advanced post-surface treatment, Cu–Cu direct bonding can be achieved with present-day fine-grain Cu films at 130℃ in air ambient with a minimum pressure of 1 MPa. The instantaneous growth rate on the first day is 164.29 nm d−1. Also, the average growth rate (∆R/∆t) is evaluated by the present experimental results: (i) 218.185 nm d−1 for the first-day period and (ii) 105.58 nm d−1 during the first 14-day period. Ultrafast grain growth and near-atomic-scale surface facilitate grain boundary motion across the bonding interface, which is the key to achieve Cu–Cu direct bonding at 130℃ in air ambient.
Databáze: Directory of Open Access Journals