Evaluation of GaN Power Transistor Switching Performance on Characteristics of Bidirectional DC-DC Converter
| Autor: | Michal Frivaldsky, Jan Morgos, Richard Zelnik |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: | |
| Zdroj: | Elektronika ir Elektrotechnika, Vol 26, Iss 4, Pp 18-24 (2020) |
| Druh dokumentu: | article |
| ISSN: | 1392-1215 2029-5731 |
| DOI: | 10.5755/j01.eie.26.4.25782 |
| Popis: | The paper deals with the experimental analysis of the switching performance of selected GaN (Galium Nitride) power transistor, whose use is then expected in bidirectional buck/boost DC-DC converter. The switching performance was evaluated through highly accurate and verified simulation models of GS61008P transistor from GaN systems. Experiments have been provided for a wide spectrum of switching frequency and load current in order to verify transistor performance. Then, based on the results, it was expected that high-frequency operation (above 500 kHz) should not distort the efficiency performance of the designed bidirectional converter. This was confirmed after laboratory measurements of the efficiency of the proposed DC-DC converter, while operation under very high switching frequency was more effective compared to low-frequency operation. Over 95 % of efficiency was achieved for both buck and boost mode (125 W), even switching frequency was above 500 kHz. |
| Databáze: | Directory of Open Access Journals |
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