CoMET: Composite-Input Magnetoelectric- Based Logic Technology

Autor: Meghna G. Mankalale, Zhaoxin Liang, Zhengyang Zhao, Chris H. Kim, Jian-Ping Wang, Sachin S. Sapatnekar
Jazyk: angličtina
Rok vydání: 2017
Předmět:
Zdroj: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 3, Pp 27-36 (2017)
Druh dokumentu: article
ISSN: 2329-9231
DOI: 10.1109/JXCDC.2017.2690629
Popis: This paper proposes composite-input magnetoelectric-based logic technology (CoMET), a fast and energy-efficient spintronics device for logic applications. An input voltage is applied to a ferroelectric (FE) material, in contact with a composite structure—a ferromagnet (FM) with in-plane magnetic anisotropy placed on top of an intragate FM interconnect with perpendicular magnetic anisotropy (PMA). Through the magnetoelectric (ME) effect, the input voltage nucleates a domain wall (DW) at the input end of the PMA-FM interconnect. An applied current then rapidly propagates the DW toward the output FE structure, where the inverse-ME effect generates an output voltage. This voltage is propagated to the input of the next CoMET device using a novel circuit structure that enables efficient device cascading. The material parameters for CoMET are optimized by systematically exploring the impact of parameter choices on device performance. Simulations on a 7-nm CoMET device show fast, low-energy operation, with a delay/energy of 99 ps/68 aJ for INV and 135 ps/85 aJ for MAJ3.
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