| Autor: |
Samoilov N.A., Frolov A.N., Krapyvko G.I., Maronchuk A.I. |
| Jazyk: |
English<br />Russian<br />Ukrainian |
| Rok vydání: |
2017 |
| Předmět: |
|
| Zdroj: |
Biomedicinskaâ Inženeriâ i Èlektronika, Vol 4, Iss 18 (2017) |
| Druh dokumentu: |
article |
| ISSN: |
2311-1100 |
| DOI: |
10.6084/m9.figshare.5483779.v1 |
| Popis: |
The article describes the technological processes for manufacturing high-voltage diodes, varicaps and Schottky diodes using layers of porous anodic oxide of silicon. It is shown that the growth features of anodic oxide of silicon at an increased voltage makes it possible to significantly improve the set of parameters and characteristics of both devices with p-n junctions and Schottky diodes. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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