| Autor: |
Bin Tang, Long-Fei Zhang, Fang-Yuan Han, Zong-Chang Luo, Qin-Qin Liang, Chen-Yao Liu, Li-Ping Zhu, Jie-Ming Zhang |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 8, Iss 1, Pp 015016-015016-7 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.5012557 |
| Popis: |
As a widely used gas insulator, sulfur hexafluoride (SF6) has a large cross section for electron absorption, which may make the molecule ionized to the -1 charge state in the high-voltage environment. Using ab initio calculations, we show that the absorbed electron is located averagely on the six F atoms, occupying the antibonding level of the s-p σ bonds and increasing the S-F bond length. The ionized SF6- molecule decreases its decomposition energy to only 1.5 eV, much lower than that of the neutral molecule (4.8 eV), which can be understood according to the occupying of the antibonding orbital and thus weakening of the s-p σ bonds. The weakening of the bonds results in an obvious red shift in the vibrational modes of the ionized SF6- molecule by 120-270 cm-1, compared to those of the neutral molecule. The detailed origin of these vibrational modes is analyzed. Since the appearance of the ionized SF6- molecules is before the decomposition reaction of the SF6- molecule into low-fluoride sulfides, this method may improve the sensitivity of the defection of the partial discharge and save more time for the prevention of the insulation failure in advance. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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