RTN and Annealing Related to Stress and Temperature in FIND RRAM Array

Autor:	Chih Yuan Chen, Chrong Jung Lin, Ya-Chin King
Jazyk:	angličtina
Rok vydání:	2019
Předmět:	Random telegraph noise Advanced FinFET technology RRAM Anneal Materials of engineering and construction. Mechanics of materials TA401-492
Zdroj:	Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-7 (2019)
Druh dokumentu:	article
ISSN:	1931-7573 1556-276X
DOI:	10.1186/s11671-018-2846-1
Popis:	Abstract In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress. After undergoing cycling stress, RRAM cells have a stronger tendency to show more frequent and intense RTN signals. The increase of noise levels in FIND RRAM cells can be alleviated generally by high temperature anneal, and with this concept, an on chip annealing scheme is proposed and demonstrated.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/8785a4a499b64373be8a6877eb354684 Zobrazit plný text záznamu Full text from SpringerLink View record in DOAJ