| Autor: |
Abdullah Al Hadi, Xingang Fu, Eklas Hossain, Rajab Challoo |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
IEEE Access, Vol 11, Pp 64248-64259 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2169-3536 |
| DOI: |
10.1109/ACCESS.2023.3288482 |
| Popis: |
This study aims to assess the performance of Gallium Nitride (GaN)-based inverters in high-power applications through simulations and a hardware-in-the-loop experiment. The focus is on the efficacy of GaN-based inverters for multilevel topologies, a five-level GaN-based cascaded H-bridge inverter controlled by a Texas Instruments (TI) C2000 microcontroller was used to conduct a hardware-in-the-loop experiment. Prior to the experiment, simulations were conducted to showcase the setup of the half-bridge, full-bridge, and five-level cascaded H-bridge inverter, as well as the generation of Pulse Width Modulation (PWM). To test the performance of the multilevel converter topology, specifically the five-level cascaded H-bridge, an evaluation board of a GaN-based half-bridge from Efficient Power Conversion Inc. and a daughter board from GaN Systems Inc. were utilized as the non-linear components in the hardware-in-loop experiments. PWM pulses were generated by the TI microcontroller for most of the setups and phase-shifted modulation was implemented for the five-level cascaded H-bridge inverter. Experimental results are demonstrated with five-level voltages which further indicates a promising future for GaN-based inverters in high-power applications. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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