Numerical and Experimental Demonstration of a Silicon Nitride-Based Ring Resonator Structure for Refractive Index Sensing

Autor: Muhammad A. Butt, Łukasz Kozłowski, Michał Golas, Mateusz Slowikowski, Maciej Filipiak, Marcin Juchniewicz, Aleksandra Bieniek-Kaczorek, Michał Dudek, Ryszard Piramidowicz
Jazyk: angličtina
Rok vydání: 2024
Předmět:
Zdroj: Applied Sciences, Vol 14, Iss 14, p 6082 (2024)
Druh dokumentu: article
ISSN: 2076-3417
DOI: 10.3390/app14146082
Popis: In optical communication and sensing, silicon nitride (SiN) photonics plays a crucial role. By adeptly guiding and manipulating light on a silicon-based platform, it facilitates the creation of compact and highly efficient photonic devices. This, in turn, propels advancements in high-speed communication systems and enhances the sensitivity of optical sensors. This study presents a comprehensive exploration wherein we both numerically and experimentally display the efficacy of a SiN-based ring resonator designed for refractive index sensing applications. The device’s sensitivity, numerically estimated at approximately 110 nm/RIU, closely aligns with the experimental value of around 112.5 nm/RIU. The RR sensor’s Q factor and limit of detection (LOD) are 1.7154 × 104 and 7.99 × 10−4 RIU, respectively. These congruent results underscore the reliability of the two-dimensional finite element method (2D-FEM) as a valuable tool for accurately predicting and assessing the device’s performance before fabrication.
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