High efficiency silicon solar cells with back ZnTe layer hosting IPV effect: a numerical case study

Autor: M. Boumaour, S. Sali, S. Kermadi, L. Zougar, A. Bahfir, Z. Chaieb
Jazyk: angličtina
Rok vydání: 2019
Předmět:
Zdroj: Journal of Taibah University for Science, Vol 13, Iss 1, Pp 696-703 (2019)
Druh dokumentu: article
ISSN: 1658-3655
16583655
DOI: 10.1080/16583655.2019.1623476
Popis: To get enhanced long-wavelength absorption, an impurity photovoltaic (IPV) mechanism was implemented within a transparent conducting oxide (TCO) at the rear of a solar cell. The numerical simulation of the N+/P (silicon)/IPV-TCO device was carried out by using SCAPS-1D program which allows the inclusion of optically active defects. In the proposed heterostructure configuration, ZnTe is a suitable material as back surface reflector. In analyzing the Si/ZnTe interface, lattice mismatch, energy band alignment and defects density were considered with appropriate treatment. In particular, to cure the detrimental 12% lattice mismatch at the interface, a thin silicon amorphous layer was inserted in-between, allowing 22.98% conversion efficiency. With adapted ZnTe Lucovsky's model for the optical capture cross sections and introduction of an oxygen radiative IPV defect (O2 level at 0.4 eV below the conduction band), a conversion efficiency of 27.15% was ultimately achieved. The experimental feasibility of the high-efficiency heterostructure device is evaluated.
Databáze: Directory of Open Access Journals
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