| Autor: |
Juhee Jeon, Kyoungah Cho, Sangsig Kim |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
IEEE Access, Vol 11, Pp 54692-54698 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2169-3536 |
| DOI: |
10.1109/ACCESS.2023.3281358 |
| Popis: |
In this study, we examine the effect of interface trap states on the electrical characteristics of single-gated feedback field-effect transistors (FBFETs) using a commercially available computer-aided design simulation package. Interface trap states exist between the channels and the oxide layers, and these trap states act as acceptor-like trap states in regions of higher energy than the intrinsic Fermi energy ( $E_{\mathrm {i}}$ ) and as donor-like trap states in regions of lower energy than $E_{\mathrm {i}}$ in the energy band. The density distribution peaks at $E_{\mathrm {i}}$ + 0.28 eV for the acceptor-like trap states and at $E_{\mathrm {i}}$ – 0.28 eV for the donor-like trap states. The occupation mechanism of these trap states is analyzed by the density of the interface states and trapped charges, the energy band diagram, and the current-voltage curves. In n-channel (p-channel) FBFETs, the latch-up voltage varies by approximately 0.01 V as the acceptor-like (donor-like) trap states increase, whereas the effect of the donor-like (acceptor-like) trap states is negligible. Moreover, the FBFETs exhibit an operating speed of 4 ns and retention time of 900 s during a memory operation, despite the existence of the interface states. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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