Charge-pumping characterization of FILOX vertical MOSFETs
Autor: | Grzegorz Głuszko, Lidia Łukasiak, Enrico Gili, Peter Ashburn |
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Jazyk: | angličtina |
Rok vydání: | 2023 |
Předmět: | |
Zdroj: | Journal of Telecommunications and Information Technology, Iss 3 (2023) |
Druh dokumentu: | article |
ISSN: | 1509-4553 1899-8852 |
DOI: | 10.26636/jtit.2007.3.833 |
Popis: | This paper presents for the first time the results of charge-pumping (CP) measurements of FILOX vertical transistors. The aim of these measurements is to provide information on the density of interface traps at the Si-SiO2 interface fabricated in a non-standard process. Flat-band and threshold voltage, as well as density of interface traps are determined. Good agreement between threshold-voltage values obtained from CP and I-V measurements is observed. |
Databáze: | Directory of Open Access Journals |
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