Charge-pumping characterization of FILOX vertical MOSFETs

Autor: Grzegorz Głuszko, Lidia Łukasiak, Enrico Gili, Peter Ashburn
Jazyk: angličtina
Rok vydání: 2023
Předmět:
Zdroj: Journal of Telecommunications and Information Technology, Iss 3 (2023)
Druh dokumentu: article
ISSN: 1509-4553
1899-8852
DOI: 10.26636/jtit.2007.3.833
Popis: This paper presents for the first time the results of charge-pumping (CP) measurements of FILOX vertical transistors. The aim of these measurements is to provide information on the density of interface traps at the Si-SiO2 interface fabricated in a non-standard process. Flat-band and threshold voltage, as well as density of interface traps are determined. Good agreement between threshold-voltage values obtained from CP and I-V measurements is observed.
Databáze: Directory of Open Access Journals