Comparison of 2D and 3D p-n Junction Differential Conductance and Diffusion Capacitance
| Autor: | Muhammadjon G. Dadamirzaev, Mamura O. Kosimova, S.R. Boydedayev, Azamat S. Makhmudov |
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| Jazyk: | English<br />Russian<br />Ukrainian |
| Rok vydání: | 2024 |
| Předmět: | |
| Zdroj: | East European Journal of Physics, Iss 2, Pp 372-379 (2024) |
| Druh dokumentu: | article |
| ISSN: | 2312-4334 2312-4539 |
| DOI: | 10.26565/2312-4334-2024-2-46 |
| Popis: | In the fabrication of 3D p-n junctions, doping or surface modification caused by ion injection changes the electrical properties and crystal structure of the semiconductor. In addition, as the size of the semiconductor device decreases, various quantum effects are gradually appearing in them. This shows that the scope of application of classical device theory is now limited. In recent years, two-dimensional (2D) materials with amazing atomically fine properties have attracted great interest. The electrostatic field properties of some 2D p-n junctions, such as WS2, MoS2, MoSe2, WSe2, and black phosphorus (BP), open the door to new possibilities for semiconductors. Changes in the diffusion capacitances and differential conductance’s of 2D p-n junctions under the influence of an microwave field, and the diffusion capacitances and differential conductance’s of 2D and 3D p-n junctions the change of conductivities under the influence of microwave field is compared. |
| Databáze: | Directory of Open Access Journals |
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