Near-IR transparent conductive amorphous tungsten oxide thin layers by non-reactive radio-frequency magnetron sputtering

Autor: Chen Hao, Chiasera Alessandro, Armellini Cristina, Speranza Giorgio, Varas Stefano, Sayginer Osman, Alfano Antonio, Cassinelli Marco, Caironi Mario, Suriano Raffaella, Zaghloul Mohamed, Tagliaferri Alberto, Ferrari Maurizio, Pietralunga Silvia M.
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: EPJ Web of Conferences, Vol 255, p 05003 (2021)
Druh dokumentu: article
ISSN: 2100-014X
20212550
DOI: 10.1051/epjconf/202125505003
Popis: Key assets for transparent electric contacts in optoelectronic applications are high conductivity and large transparency over extended spectral range. Indium-Tin-Oxide and Aluminium-doped-Zinc-oxide are commercial examples, with their electrical conductivity resembling those of metals, despite, their transparency being limited up to 1.5µm. This work introduces smooth and compact amorphous thin films of n-type semiconducting WO3-x prepared by RF-sputtering followed by annealing in dry air, as optical layers of tailorable dielectric properties. We evaluate Figure of Merit, combining electrical conductivity and optical transparency, and rate the performances as a transparent conductive layer.
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