Slow-light Mach–Zehnder modulators based on Si photonic crystals
| Autor: | Toshihiko Baba, et al. |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: | |
| Zdroj: | Science and Technology of Advanced Materials, Vol 15, Iss 2, p 024602 (2014) |
| Druh dokumentu: | article |
| ISSN: | 1468-6996 1878-5514 |
| DOI: | 10.1088/1468-6996/15/2/024602 |
| Popis: | Mach–Zehnder optical modulators are the key devices for high-speed electrical-to-optical conversion in Si photonics. Si rib waveguides with a p–n diode structure operated in the carrier depletion mode have mainly been developed as their phase shifters. Their length is usually longer than millimeters due to the limited change in the refractive index due to the carrier depletion in a Si p–n diode. This length is shorter than commercial LiNbO3 modulators, but still much shorter devices are desired for large-scale integration and for simplifying the high-speed RF modulation. A promising solution is to use slow light in photonic crystal waveguides, which enhances the modulation efficiency in proportion to the group-velocity refractive index n g. In particular, dispersion-engineered slow light allows more than five-fold enhancement, maintaining a wide working spectrum as well as large temperature tolerance. The devices with a phase shifter length of around 100 μm are fabricated by a standard process compatible with complementary metal-oxide semiconductors. The operation at 10 Gbps and higher speeds are obtained in the wavelength range of 16.9 nm and temperature range of 105 K. |
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