Autor: |
K. Girija Sravani, D. Prathyusha, K. Srinivasa Rao, P. Ashok Kumar, G. Sai Lakshmi, Ch. Gopi Chand, P. Naveena, Lakshmi Narayana Thalluri, Koushik Guha |
Jazyk: |
angličtina |
Rok vydání: |
2019 |
Předmět: |
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Zdroj: |
IEEE Access, Vol 7, Pp 44471-44488 (2019) |
Druh dokumentu: |
article |
ISSN: |
2169-3536 |
DOI: |
10.1109/ACCESS.2019.2905726 |
Popis: |
This paper deals with the study of dimple type RF MEMS capacitive shunt switch using different meandering techniques for high isolation and low actuation voltage. The novelty of the proposed RF MEMS switch is it incorporates the meanders and dimples, which help to reduce the actuation voltage. The proposed switch structure is optimized, designed, and simulated with FEM analysis such as electromechanical and electromagnetic by using COMSOL and HFSS tools respectively. The best performance of the switch is observed by varying different parameters such as beam material, beam thickness, dielectric thickness, and airgap. The proposed switch with different meandering techniques attains the pull-in voltage in the range of 10.3-46 V, particularly the three uniform meander technique has low actuation voltage of 10.3 V. The RF performance of the device is particularly tuned in the range of 26.5-40 GHz frequency range and it is analyzed for all types of meanders. Among them, the non-uniform single meander has attained the best isolation of -54.13 dB at 40 GHz in the off state. The insertion and return losses of the device are -0.514 dB and -17.35 dB over 1-40 GHz frequency in on state. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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