Defect-Induced Efficient Heteroepitaxial Growth of Single-Wall Carbon Nanotubes @ Hexagonal Boron Nitride Films

Autor:	Changping Yu, Lili Zhang, Gang Zhou, Feng Zhang, Zichu Zhang, Anping Wu, Pengxiang Hou, Huiming Cheng, Chang Liu
Jazyk:	angličtina
Rok vydání:	2023
Předmět:	carbon nanotubes hexagonal boron nitride defect derivatives Technology Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
Zdroj:	Materials, Vol 16, Iss 5, p 1864 (2023)
Druh dokumentu:	article
ISSN:	1996-1944
DOI:	10.3390/ma16051864
Popis:	Carbon nanotube-based derivatives have attracted considerable research interest due to their unique structure and fascinating physicochemical properties. However, the controlled growth mechanism of these derivatives remains unclear, and the synthesis efficiency is low. Herein, we proposed a defect-induced strategy for the efficient heteroepitaxial growth of single-wall carbon nanotubes (SWCNTs)@hexagonal boron nitride (h-BN) films. Air plasma treatment was first performed to generate defects on the wall of SWCNTs. Then, atmospheric pressure chemical vapor deposition was conducted to grow h-BN on the surface of SWCNTs. Controlled experiments combined with first-principles calculations revealed that the induced defects on the wall of SWCNTs function as nucleation sites for the efficient heteroepitaxial growth of h-BN.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/85bc2025ad474d419a9891b5a0d55baa Zobrazit plný text záznamu View record in DOAJ Plný text ve formátu PDF Plný text ve formátu HTML
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