| Autor: |
Jiaju Ma, Eric R. Fossum |
| Jazyk: |
angličtina |
| Rok vydání: |
2017 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 5, Iss 1, Pp 69-78 (2017) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2016.2618721 |
| Popis: |
A novel quanta image sensor (QIS) jot device with a CMOS compatible junction-field effect transistor (JFET) source follower (SF) is introduced. The device is proposed to further reduce the read noise of QIS jots and ultimately realize a read noise of 0.15e-r.m.s. for accurate photoelectron counting. We take advantage of the small gate capacitance in a p-channel JFET SF to reduce the total capacitance of the floating diffusion, which yields a greatly improved conversion gain of 1.38 mV/e- in TCAD simulation compared to MOSFET SF with the same pitch size. Lower 1/f noise is also anticipated yielding a low input-referred read noise. The device is designed in a 45 nm CMOS image sensor process. The fundamental working principles of this device are discussed, and important functionalities are analyzed with simulation and theory. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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