| Autor: |
V. V. Murav'ev, V. N. Mishchenka |
| Jazyk: |
ruština |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 2, Pp 53-57 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
1729-7648 |
| Popis: |
The results of the simulation of electron transfer processes in the three-dimensional structure of 4H-SiC silicon carbide are presented using the Monte Carlo method. The dependence of the average drift velocity, average energy and electron mobility of electrons and the diffusion coefficient from the electric field are obtained. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
