| Autor: |
Md. Hasan Raza Ansari, Udaya Mohanan Kannan, Seongjae Cho |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
Nanomaterials, Vol 11, Iss 7, p 1773 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2079-4991 |
| DOI: |
10.3390/nano11071773 |
| Popis: |
This work showcases the physical insights of a core-shell dual-gate (CSDG) nanowire transistor as an artificial synaptic device with short/long-term potentiation and long-term depression (LTD) operation. Short-term potentiation (STP) is a temporary potentiation of a neural network, and it can be transformed into long-term potentiation (LTP) through repetitive stimulus. In this work, floating body effects and charge trapping are utilized to show the transition from STP to LTP while de-trapping the holes from the nitride layer shows the LTD operation. Furthermore, linearity and symmetry in conductance are achieved through optimal device design and biases. In a system-level simulation, with CSDG nanowire transistor a recognition accuracy of up to 92.28% is obtained in the Modified National Institute of Standards and Technology (MNIST) pattern recognition task. Complementary metal-oxide-semiconductor (CMOS) compatibility and high recognition accuracy makes the CSDG nanowire transistor a promising candidate for the implementation of neuromorphic hardware. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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