| Autor: |
Yuan Du, Li Du, Wuyu Fan, Yang Xiao, Mau-Chung Frank Chang |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 7, Iss 1, Pp 10-17 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2329-9231 |
| DOI: |
10.1109/JXCDC.2021.3098469 |
| Popis: |
In this article, we characterized the charge trapping and detrapping behaviors of charge-trap transistors (CTTs) in standard 28-nm CMOS technology and formulated its programmable threshold voltage ( $V_{\mathrm {TH}}$ ). Both thin-oxide and thick-oxide CTT devices are measured, modeled, and analyzed. More than 50- and 100-mV continuous $V_{\mathrm {TH}}$ tuning ranges are achieved for thin and thick oxide devices, respectively. Multiple cycles of programming and erasing operations are demonstrated; however, the reliability needs to be solved in the future. To utilize the developed programmable threshold model, a nonvolatile memory (NVM) cell and an analog arithmetic unit (AAU) are proposed and simulated as two proof-of-concept CTT-based designs. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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