Fowler-Nordheim Tunneling Characterization on Poly1-Poly2 Capacitors for the Implementation of Analog Memories in CMOS 0.5 μm Technology

Autor: Enrique J. Tinajero-Perez, Jesus Ezequiel Molinar-Solis, Rodolfo Z. Garcia-Lozano, Pedro Rosales-Quintero, Jose M. Rocha-Perez, Alejandro Diaz-Sanchez, Arturo Morales-Acevedo
Jazyk: angličtina
Rok vydání: 2014
Předmět:
Zdroj: Advances in Condensed Matter Physics, Vol 2014 (2014)
Druh dokumentu: article
ISSN: 1687-8108
1687-8124
DOI: 10.1155/2014/632785
Popis: The experimental results of the Fowler-Nordheim characterization using poly1-poly2 capacitors on CMOS ON Semi 0.5 μm technology are presented. This characterization allows the development, design, and characterization of a new current-mode analog nonvolatile memory. Experimental results of the memory cell architecture are presented and demonstrate the usefulness of the proposed architecture.
Databáze: Directory of Open Access Journals
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