| Autor: |
DeGui Sun, Qingyu Sun, Wenchao Xing, Zheyu Sun, Hongpeng Shang, Liyuan Chang, Xueping Wang, Peng Liu, Trevor Hall |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 8, Iss 8, Pp 085217-085217-10 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.5045516 |
| Popis: |
For a multilayered configuration of SiO2 film created by plasma enhanced chemical vapor deposition (PECVD), the thermal stress and growth-caused stress are two intrinsic stresses. In this work, based on the interactions of all the layers of film, a nonlinearly distributed structural stress over a large substrate is found. The numerical simulations for the nonlinear distribution of the structural stress and the uniform distributions of the two intrinsic stresses are carried out. As a result, the tensile structural stress decreases by ∼4x105MPa from center to edge of a 6” silicon wafer and the compressive growth-caused stress increases by ∼5x105MPa corresponding to the growth-rate increase of 40nm/s, which matches a ∼120MPa distribution of residual compressive stress obtained with in-situ measurements of film samples. In simulations, it is also discovered that the initial curvature of substrate has an impressive influence on the later grown film. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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