| Autor: |
Yu Zhou, Yaozong Zhong, Hongwei Gao, Shujun Dai, Junlei He, Meixin Feng, Yanfei Zhao, Qian Sun, An Dingsun, Hui Yang |
| Jazyk: |
angličtina |
| Rok vydání: |
2017 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 5, Iss 5, Pp 340-346 (2017) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2017.2725320 |
| Popis: |
An enhancement-mode high-electron-mobility transistor with a p-GaN gate was fabricated by using a chemistry-ease Cl2/N2/O2-based inductively coupled plasma etching technique. This etching technique features a precise etching self-termination at the AlGaN barrier surface, which enables a broad process window with a large tolerance of etching time. With a post-annealing process, the property of two-dimensional electron gas (2DEG) can be restored to a high level after the etching. The mechanisms of etching self-termination and 2DEG recovery were clarified. The fabricated device exhibits a drain saturation current of 355 mA/mm with a threshold voltage of +1.1 V, an on/off ratio of 107, and a static on-resistance RON of 10 Ω·mm. Furthermore, normally-off operation of the device can be achieved across the wafer. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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