| Autor: |
Manish Kumar Singh, Abhinav Prakash, Gary Wolfowicz, Jianguo Wen, Yizhong Huang, Tijana Rajh, David D. Awschalom, Tian Zhong, Supratik Guha |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
APL Materials, Vol 8, Iss 3, Pp 031111-031111-8 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2166-532X |
| DOI: |
10.1063/1.5142611 |
| Popis: |
Rare-earth ions (REIs) have incomplete 4f shells and possess narrow optical intra-4f transitions due to shielding from electrons in the 5s and 5p orbitals, making them good candidates for solid-state optical quantum memory. The emission of Er3+ in the telecom C-band (1530 nm–1565 nm) makes it especially attractive for this application. In order to build practical, scalable devices, the REI needs to be embedded in a non-interacting host material, preferably one that can be integrated with silicon. In this paper, we show that Er3+ can be isovalently incorporated into epitaxial Y2O3 thin films on Si (111). We report on the synthesis of epitaxial, single-crystalline Er:Y2O3 on Si with a narrow inhomogeneous linewidth in the photoluminescence (PL) spectra, 5.1 GHz ( |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
