| Autor: |
Qinqin Wang, Beibei Gao, Wangping Wu, Kaiyuan Guo, Wei Huang, Jianning Ding |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
Materials, Vol 17, Iss 11, p 2747 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
1996-1944 |
| DOI: |
10.3390/ma17112747 |
| Popis: |
Thin polysilicon (poly-Si)-based passivating contacts can reduce parasitic absorption and the cost of n-TOPCon solar cells. Herein, n+-poly-Si layers with thicknesses of 30~100 nm were fabricated by low-pressure chemical vapor deposition (LPCVD) to create passivating contacts. We investigated the effect of n+-poly-Si layer thickness on the microstructure of the metallization contact formation, passivation, and electronic performance of n-TOPCon solar cells. The thickness of the poly-Si layer significantly affected the passivation of metallization-induced recombination under the metal contact (J0,metal) and the contact resistivity (ρc) of the cells. However, it had a minimal impact on the short-circuit current density (Jsc), which was primarily associated with corroded silver (Ag) at depths of the n+-poly-Si layer exceeding 40 nm. We introduced a thin n+-poly-Si layer with a thickness of 70 nm and a surface concentration of 5 × 1020 atoms/cm3. This layer can meet the requirements for low J0,metal and ρc values, leading to an increase in conversion efficiency of 25.65%. This optimized process of depositing a phosphorus-doped poly-Si layer can be commercially applied in photovoltaics to reduce processing times and lower costs. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
|
Nepřihlášeným uživatelům se plný text nezobrazuje |
K zobrazení výsledku je třeba se přihlásit.
|
