| Autor: |
Z. Li, Y. Zhao, J. D. Gallagher, D. Lombardo, A. Sarangan, Imad Agha, J. Kouvetakis, J. Menéndez, J. Mathews |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 12, Iss 7, Pp 075016-075016-6 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0094589 |
| Popis: |
Waveguides were fabricated from highly n-type doped GeSn layers with Sn content at 5.4%–6.2% and grown on Ge-buffered Si substrates. The waveguides were optically pumped using a 976 nm continuous-wave laser, and the waveguide emission spectrum was collected and analyzed. The results indicate a non-linear power increase via higher injection-level at room temperature. Comprehensive theoretical models for the waveguide emission power dependence were developed to reproduce experimental data and provide an understanding of the nonlinear power dependence. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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