Challenges for 10 nm MOSFET process integration

Autor:	Mikael Östling, Bengt Gunnar Malm, Martin von Haartman, Julius H ̊allstedt, Zhen Zhang, Per-Erik Hellström, Shili Zhang
Jazyk:	angličtina
Rok vydání:	2023
Předmět:	sstrained silicon silicon germanium silicon-oninsulator (SOI) high-k dielectrics hafnium oxide nano-wire Telecommunication TK5101-6720 Information technology T58.5-58.64
Zdroj:	Journal of Telecommunications and Information Technology, Iss 2 (2023)
Druh dokumentu:	article
ISSN:	1509-4553 1899-8852
DOI:	10.26636/jtit.2007.2.805
Popis:	An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. The need for high-k gate dielectrics and a metal gate electrode is discussed. Different techniques for strain-enhanced mobility are discussed. As an example, ultra thin body SOI devices with high mobility SiGe channels are demonstrated.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/8251508ceaf44c87a486e43006ec420a Zobrazit plný text záznamu View record in DOAJ