| Autor: |
Ran GUO, Zhichao WANG, Jing WANG, Chengling LI, Yonghua LI, Sheng HU |
| Jazyk: |
čínština |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
Zhongguo yiliao qixie zazhi, Vol 48, Iss 5, Pp 478-485 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
1671-7104 |
| DOI: |
10.12455/j.issn.1671-7104.240230 |
| Popis: |
This paper investigates the mechanism of radio-frequency (RF) heating that occurs when two adjacent orthopedic implants are present together under magnetic resonance imaging (MRI) at 1.5 Tesla and 3.0 Tesla. When a patient has multiple implants close to each other, interactions between the implants may increase RF heating. Typical generic interlocking plate and antibiotic nail implants are adopted as examples. To analyze the effect of adjacent implants, the amplitude and direction of incident and scattering vector electric fields at the hot spot position are calculated and extracted using numerical simulation based on Huygens principle. It is shown that a strong coupling effect occurs due to the existence of both the incident field and a strong scattering field. Huygens principle can be used to obtain the first and second order scattering fields generated between implants. If the first- and second-order electric field terms are summed within a certain region, the RF-induced heating of this dual-implant system increases. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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