Effect of P+ Source Pattern in 4H-SiC Trench-Gate MOSFETs on Low Specific On-Resistance

Autor:	Jee-Hun Jeong, Min-Seok Jang, Ogyun Seok, Ho-Jun Lee
Jazyk:	angličtina
Rok vydání:	2022
Předmět:	silicon carbide 4H-SiC trench-gate MOSFETs 3D-simulation design consideration specific on-resistance Technology Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999
Zdroj:	Applied Sciences, Vol 13, Iss 1, p 107 (2022)
Druh dokumentu:	article
ISSN:	13010107 2076-3417
DOI:	10.3390/app13010107
Popis:	Novel 1.7-kV 4H-SiC trench-gate MOSFETs (TMOSFETs) with a grid pattern and a smaller specific on-resistance are proposed and demonstrated via numerical simulations. The proposed TMOSFETs provide a reduced cell pitch compared with TMOSFETs with square and stripe patterns. Although TMOSFETs with a grid pattern reduce the channel area by approximately 10%, the cell density is increased by approximately 35%. Consequently, the specific on-resistance of the grid pattern is less than that of the square and stripe patterns. The forward blocking characteristics of the grid pattern are increased by the reduced impact ionization rate at the P/N junction. As a result, the figure-of-merit (FOM) of the grid pattern is increased by approximately 33%.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/d8174fafe7c04f9e838c919b5aaebe5b Zobrazit plný text záznamu View record in DOAJ