| Autor: |
S. P. Kobeleva, I. M. Anfimov, I. V. Schemerov, L. P. Kholodny, I. V. Borzikh, V. V. Ptashinsty |
| Jazyk: |
ruština |
| Rok vydání: |
2017 |
| Předmět: |
|
| Zdroj: |
Standartnye Obrazcy, Vol 0, Iss 1, Pp 16-22 (2017) |
| Druh dokumentu: |
article |
| ISSN: |
2077-1177 |
| Popis: |
A comparison of two methods for measurement of the free carrier recombination lifetime in the unpassivated samples of high resistivity n-type silicon single crystalls (reference samples of "GIREDMET") was made. The methods were based on the photoconductivity decay measurements (High frequence and /-PCD). Effective recombination lifetime value in the range 1-1500 /is were achieved by changes of the sample thickness from 0,4 to 10 mm. Bulk recombination lifetime was calculated using the relation between the effective recombination lifetime and the sample thickness. It was shown that random and systematic errors for two methods are of the same order. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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