| Autor: |
S. Mathew, J. Reiprich, S. Narasimha, S. Abedin, V. Kurtash, S. Thiele, T. Scheler, B. Hähnlein, P. Schaaf, H. O. Jacobs, J. Pezoldt |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 13, Iss 9, Pp 095224-095224-7 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0165868 |
| Popis: |
Hysteresis effects and their tuning with electric fields and light were studied in thin film molybdenum disulfide transistors fabricated from sulfurized molybdenum films. The influence of the back-gate voltage bias, voltage sweep range, illumination, and AlOx encapsulation on the hysteresis effect of the back-gated field effect transistors was studied and quantified. This study revealed the distinctive contribution of MoS2 surface, MoS2/SiO2 interface defects and their associated traps as primary sources of of hysteresis. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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