| Autor: |
Sergey Yu. Turishchev, Dmitry A. Koyuda, Alexey V. Ershov, Ulii A. Vainer, Tatiana V. Kulikova, Boris L. Agapov, Elena N. Zinchenko, Margarita V. Grechkina, Daria S. Usoltseva, Vladimir A. Terekhov |
| Jazyk: |
English<br />Russian |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
Конденсированные среды и межфазные границы, Vol 20, Iss 3, Pp 477-485 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
1606-867X |
| DOI: |
10.17308/kcmf.2018.20/586 |
| Popis: |
With the use of scanning electron microscopy, atomic force microscopy and X-ray diffraction the morphology, composition and structure evolution of a-Si/ZrO2 and a-SiOx/ZrO2 multilayered nanoperiodical structures subjected to high temperature annealing were investigated. Each ZrO2 layers thickness was 2 nm while for a-Si or a-SiOx layers thickness was 8 nm with total number of layers 34 (a-SiO/ZrO2) and 43 (a-SiOx/ZrO2). Annealing was performed for 30 minutes at temperature of 1100 °С. Multilayered nanoperiodical structures have grainy relief with comparable morphology and size characteristics without noticeable dependence on layers interleaving sequence and their composition. 30 minutes anneal at 1100 °С for a-SiOx/ZrO2 multilayered nanoperiodical structures did not transform their surface. Under the same temperature for a-Si/ZrO2 multilayered nanoperiodical structures we observed noticeable changes in samples surface morphology as irregularities formation with 100 nm width and height that exceeds bilayer thickness. By X-ray diffraction technique the presence of thin ZrSi2 silicide layer is demonstrated in a-Si/ZrO2 structures as the result of silicon chemical interaction with zirconium dioxide under high temperature treatment of nanoperiodical multilayers. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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