| Autor: |
Tsunaki Takahashi, Takeo Matsuki, Takahiro Shinada, Yasuo Inoue, Ken Uchida |
| Jazyk: |
angličtina |
| Rok vydání: |
2016 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 4, Iss 5, Pp 365-373 (2016) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2016.2568261 |
| Popis: |
We demonstrate clear self-heating effects (SHEs) of bulk and silicon-on-insulator (SOI) MOSFETs for various SOI/buried oxide (BOX) thicknesses including ultra-thin 6 nm BOX, which was not detected by the ac conductance method, using the four-terminal gate resistance technique. We clarify that the SHE in bulk MOSFETs originates from the degradation of thermal conductivity in a heavily doped well region. The strong chip-temperature dependence of the SHE was observed only in bulk MOSFETs. As results of the chip temperature-dependent SHE of bulk devices and the SHE suppression by BOX thinning, the device temperature of ultra-thin BOX SOI MOSFETs is close to that of bulk MOSFETs at an elevated chip temperature, which suggests the thermal advantage of extremely thin BOX structures. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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