| Autor: |
Dongyan Zhao, Yubo Wang, Jin Shao, Yanning Chen, Zhen Fu, Qingtao Xia, Shuaipeng Wang, Xiuwei Li, Guangzhi Dong, Min Zhou, Dapeng Zhu |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 12, Iss 5, Pp 055114-055114-6 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0088020 |
| Popis: |
Magnetic tunnel junctions have been widely used in various applications, such as magnetic sensors and magnetic random-access memories. In the practical application of MTJs, they are usually used in series toward high sensitivity and high stability, especially for sensor applications. In this paper, serial MTJs devices on 8 in. wafers were fabricated. The temperature dependence of the tunnel magnetoresistance ratio, resistances in parallel and antiparallel configurations, and dynamic conductance were systematically investigated. The results of serial MTJs devices are consistent with a single MTJ device. This research suggests that serial MTJs can be directly used to investigate the magnetic tunneling properties of MTJ stacks. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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