| Autor: |
Jia Cong, Luhong Mao, Sheng Xie, Fan Zhao, Dong Yan, Weilian Guo |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
IEEE Photonics Journal, Vol 11, Iss 3, Pp 1-10 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
1943-0655 |
| DOI: |
10.1109/JPHOT.2019.2910130 |
| Popis: |
To prepare a desired negative differential resistance (NDR) device by standard complementary-metal-oxide-semiconductor (CMOS) process, a photoelectric dual control NDR device with a PNP bipolar-junction-transistor (BJT) and an NPN BJT was designed and fabricated by using the Si-base standard 0.18 μm CMOS process without any process modification and a special substrate. In order to reduce the valley current under optical control, a metal mask was added to the NDR device. The results show that the device exhibits good NDR characteristics under either voltage-control or photo-control. Under voltage-control, a low volley current (0.23 pA) and a high peak-to-valley current ratio (1.4 × 1010) are obtained at less than 1 V. Under photo-control, the two parameters obtained at less than 0.5 V, are 37 nA and 4827, respectively. Also, the device displays fine S-type NDR characteristics and nice maintaining response function under photo-control. These superior photoelectric NDR characteristics endow the device with greatly potential application in the photoelectric logic circuits. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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