| Autor: |
Titipong Phoophathong, Supachai Ritjareonwattu |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
Science Technology and Engineering Journal (STEJ), Vol 7, Iss 2, Pp 1-8 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2697-6072 |
| Popis: |
A single-electron transistor (SET) is a promising technology, superseding a traditional transistor. This device needs to be accurately controlled by external voltage sources because this sophisticated structure is operated in the submicron scale. Quantum phenomena control a single-electron flow through the SET framework andkeep the electron in this framework. The number of excess electrons is important since it indicates the state of the device. The external potential change can disturb the state constant. To forecast and specify the state, a mathematical model of the state transition was built. The model was then plotted as a stability diagram. The electrostatic energy was considered and analytically solved for the model. In this way, the complicated mathematics involved in this quantum phenomena could be simplified. In the result, the stability diagram is plotted by using the capacitance parameters that is reported by Hofheinz et al. (2006) and it strongly correlates with stability diagrams that were previously reported, however, the approach was different. With simplicity method, it may be applied to the type of complex single-electron devices such as single electron pump. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
