Properties of the Si-SiO2 Interfaces in MOS Structures with Nitrogen Doped Silicon
| Autor: | Ladislav Harmatha, Peter Ballo, Juraj Breza, Pavol Pisecny, Milan Tapajna |
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| Jazyk: | angličtina |
| Rok vydání: | 2006 |
| Předmět: | |
| Zdroj: | Advances in Electrical and Electronic Engineering, Vol 5, Iss 1, Pp 334-336 (2006) |
| Druh dokumentu: | article |
| ISSN: | 1336-1376 1804-3119 |
| Popis: | The article presents the results of capacitance measurements on MOS structures with a silicon substrate that wasdoped by nitrogen during the growth of the single crystal by Czochralski’s method. Attention is paid to the energydistribution of the trap density at the Si-SiO2 interface. The effect of the bond of nitrogen and oxygen brought about a slightincrease in the trap density with a typical distribution of energy maxima of the deep levels in the forbidden band of Si. |
| Databáze: | Directory of Open Access Journals |
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