| Autor: |
Anatoly V. Dvurechenskii, Aleksey V. Kacyuba, Gennady N. Kamaev, Vladimir A. Volodin, Natalia P. Stepina, Aigul F. Zinovieva, Vladimir A. Zinovyev |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Materials Proceedings, Vol 14, Iss 1, p 68 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2673-4605 |
| DOI: |
10.3390/IOCN2023-14481 |
| Popis: |
The formation of CaSi2 films on Si(111) with the molecular-beam epitaxy (MBE) of CaF2 under fast electron-beam irradiation was investigated. The method of a high-planarity CaSi2 film synthesis assisted by electron-beam irradiation was developed. We combined two approaches to reduce the film roughness: the post-growth electron irradiation and codeposition of additional Si during CaF2 growth. The application of the solid-phase epitaxy technique at the initial stage of film growth allowed for us to reduce surface roughness down to 1–2 nm. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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