| Autor: |
Li Lu, Feng Lin, Shulang Ma, Zhibo Yin, Yuanchang Sang, Weifeng Sun, Siyang Liu, Wei Su |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1188-1193 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2021.3128755 |
| Popis: |
In this work, four kinds of lateral double-diffused MOS (LDMOS) devices with different split shallow trench isolation (STI) structures (Device A: LDMOS with traditional split-STI, Device B: LDMOS with slope-STI, Device C with step-STI and Device D with H-shape-STI) have been fabricated and the hot-carrier reliabilities also have been investigated due to the serious environment they are endured. The maximum bulk current (Ibmax) stress and the maximum gate voltage (Vgmax) stress have been carried out and the inner mechanism of device degradation have been investigated successfully. With the assistance of the T-CAD simulation tools, it is found that the main damage point locates at the STI conners with a mount of interface states generation, inducing serious degradation for these four devices. The Device D owns high hot-carrier reliability due to its special structure with narrow split-STI. The worst device is Device C because of the presence of extra STI damage point. Finally, a mechanism verification, the charge pumping (CP) method has been applied to better understand this work. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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