| Autor: |
Shuai Wang, Zun-Ren Lv, Sheng-Lin Wang, Xiao-Guang Yang, Tao Yang |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
AIP Advances, Vol 14, Iss 2, Pp 025121-025121-6 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0168625 |
| Popis: |
Laser junction temperature (Tj) is an essential parameter that directly affects the light power and lifetime of semiconductor lasers. Here, we investigate the effect of Tj on an InAs/GaAs quantum dot (QD) laser grown on a Si(001) substrate. Under 1% low pulsed current (1 µs pulse width and 100 µs period), the pure temperature-induced mode shift rate is 0.084 nm/°C. By increasing the duty cycle and measuring the corresponding mode wavelength shift, the laser’s Tj under the continuous-wave (Tj-CW) mode is predicted to be from 31.1 to 81.6 °C when the injection current increases from 100 to 550 mA. Next, the average thermal resistance is 36.2 °C/W. Moreover, the non-negligible increase in Tj-CW is analyzed to significantly reduce the mean-time-to-failure of Si-based QD laser, especially for cases under high CW injection currents. These results provide an accurate reference for the thermal analysis of silicon-based QD lasers and point the way to high performance on-chip light sources by improving the laser heat accumulation. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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