| Autor: |
Xiao-Xi Li, Guang Zeng, Yu-Chun Li, Hao Zhang, Zhi-Gang Ji, Ying-Guo Yang, Man Luo, Wei-Da Hu, David Wei Zhang, Hong-Liang Lu |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
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| Zdroj: |
npj Flexible Electronics, Vol 6, Iss 1, Pp 1-9 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2397-4621 |
| DOI: |
10.1038/s41528-022-00179-3 |
| Popis: |
Abstract Deep-ultraviolet (DUV) phototransistors have shown great potential applications in UV imaging, artificial intelligence, and wearable optoelectronics. Among a large number of wide bandgap semiconductors, the quasi-two-dimensional β-Ga2O3 is considered as an ideal candidate for DUV photodetector applications. Herein, we report a high responsivity (R) and fully flexible Ta-doped β-Ga2O3 DUV phototransistor which exhibits outstanding optoelectrical properties with a high R of 1.32 × 106 A/W, a large detectivity of 5.68 × 1014 Jones, a great photo-to-dark current ratio of 1.10 × 1010%, a high external quantum efficiency of 6.60 × 108%, and an ultra-fast response time of ~3.50 ms. Besides, the flexible Ta-doped β-Ga2O3 device also displays high reliability and mechanical flexibility that can sustain well after over 1 × 104 bending cycles. Moreover, high-contrast imaging of UV light was obtained on the flexible DUV detector arrays, which can be efficiently trained and recognized by an artificial neural network. Our findings offer a perspective to develop wearable optoelectronics and UV imaging based on high-performance flexible β-Ga2O3 DUV phototransistors, providing an inspiration for the future work in artificial intelligence and bionic robot fields. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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