Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy

Autor:	Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Elmira M. Naurzalieva, Xushnida Yu. Utemuratova
Jazyk:	English<br />Russian<br />Ukrainian
Rok vydání:	2023
Předmět:	silicon gadolinium silver raman spectrum doping complex defects Physics QC1-999
Zdroj:	East European Journal of Physics, Iss 3, Pp 430-433 (2023)
Druh dokumentu:	article
ISSN:	2312-4334 2312-4539
DOI:	10.26565/2312-4334-2023-3-47
Popis:	Silicon doped with gadolinium and silver impurities were studied using a Renishaw InVia Raman spectrometer. Registration and identification of both crystalline and amorphous phase components in the samples was carried out. Some changes are observed in the Raman spectra of gadolinium-doped silicon samples compared to the initial sample. It has been experimentally found that an increase in the silver impurity concentration in gadolinium-doped silicon leads to a smoothing of the Raman spectrum, which indicates the formation of a more perfect crystal structure.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/c7c5632f9f014d31917b0fd711308bac Zobrazit plný text záznamu View record in DOAJ