Numerical study of thermal stress during different stages of silicon Czochralski crystal growth
| Autor: | A. Benmeddour, S. Meziani |
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| Jazyk: | English<br />French |
| Rok vydání: | 2009 |
| Předmět: | |
| Zdroj: | Revue des Énergies Renouvelables, Vol 12, Iss 4, Pp 575-584 (2009) |
| Druh dokumentu: | article |
| ISSN: | 1112-2242 2716-8247 |
| Popis: | In this paper, the influence of various crystal heights to the crystal/melt interface shape and thermal stresses distribution in the large diameter (300 mm) of the silicon single crystal growth in a Czochralski process was studied numerically. A tow dimensional fluid flow and heat transfer with solidification model was developed. The Navier-Stoks and energy equations in melt and the heat conduction equation in crystal are solved using the control volume-based finite difference method. The thermal elastic stress fields for different stages are calculated from the temperature field by adopting the plane strain model in an axi-symmetric geometry of a cylindrical crystal. It was found that the melt/crystal interface shape becomes more concave and the maximum value of thermal stress in the crystal reduces as the crystal grows. A good agreement between our numerical simulations and those found in the literature is obtained. |
| Databáze: | Directory of Open Access Journals |
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