Study on Resistance Switching Properties of Na0.5Bi0.5TiO3Thin Films Using Impedance Spectroscopy

Autor: Zhang Ting, Zhang Xinan, Ding Linghong, Zhang Weifeng
Jazyk: angličtina
Rok vydání: 2009
Předmět:
Zdroj: Nanoscale Research Letters, Vol 4, Iss 11, Pp 1309-1314 (2009)
Druh dokumentu: article
ISSN: 1931-7573
1556-276X
DOI: 10.1007/s11671-009-9397-4
Popis: Abstract The Na0.5Bi0.5TiO3(NBT) thin films sandwiched between Au electrodes and fluorine-doped tin oxide (FTO) conducting glass were deposited using a sol–gel method. Based on electrochemical workstation measurements, reproducible resistance switching characteristics and negative differential resistances were obtained at room temperature. A local impedance spectroscopy measurement of Au/NBT was performed to reveal the interface-related electrical characteristics. The DC-bias-dependent impedance spectra suggested the occurrence of charge and mass transfer at the interface of the Au/NBT/FTO device. It was proposed that the first and the second ionization of oxygen vacancies are responsible for the conduction in the low- and high-resistance states, respectively. The experimental results showed high potential for nonvolatile memory applications in NBT thin films.
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