Determination of temperature dependence of electron effective mass in 4H-SiC from reverse current-voltage characteristics of 4H-SiC Schottky barrier diodes

Autor:	A. Latreche
Jazyk:	angličtina
Rok vydání:	2020
Předmět:	4h-sic schottky diode electron effective mass i-v method reverse current thermionic emission tunneling current Physics QC1-999
Zdroj:	Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 23, Iss 3, Pp 271-275 (2020)
Druh dokumentu:	article
ISSN:	1560-8034 1605-6582
DOI:	10.15407/spqeo23.03.271
Popis:	The current-voltage-temperature profiling method has been used with 4H-SiC Schottky barrier diodes and presented for determining the electron effective mass in 4H-SiC. The extracted electron effective mass has been found to be temperature dependent, it decreases with increasing the temperature. Moreover, a good agreement was found between our obtained values of electron effective mass (m* = 0.18m0, 0.21m0) at room temperature and other values that are obtained by different methods.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/7a9b6b17343748a996251db5239b53c8 Zobrazit plný text záznamu View record in DOAJ Plný text ve formátu PDF