| Autor: |
Sung-Un Kim, Jeong-Kyun Oh, Dae-Young Um, Bagavath Chandran, Cheul-Ro Lee, Yong-Ho Ra |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
IEEE Photonics Journal, Vol 15, Iss 1, Pp 1-5 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
1943-0655 |
| DOI: |
10.1109/JPHOT.2023.3236014 |
| Popis: |
The extended reality (XR) display, including augmented reality (AR) and virtual reality (VR), requires ultrahigh-resolution and high-luminance pixel technology. GaN-based micro-LEDs are the most promising for high-density pixel applications. However, it is necessary to simultaneously fabricate full-color R/G/B emitters on a single substrate. Moreover, the efficiency droop at long wavelengths with high-indium InGaN still remains a challenge. The InGaN nanorod has the potential to realize monolithic R/G/B LEDs on a single substrate, and the Al reflector has a light reflectance that can dramatically improve light extraction efficiency. Here, we designed sub-micron monolithic full-color R/G/B nanorod LEDs with an Al core-shell reflector on single chip. The optimal structures for light confinement and vertical light extraction by single InGaN nanorod R/G/B LED structures were identified. The single nanorod with Al core-shell structure dramatically increased the light extraction efficiency, and showed an improvement of more than 20%, especially in the red wavelength. As a result, by introducing a long-length nanorod structure, we have successfully designed a new submicron pixel with full-color R/G/B LEDs operating within 1 μm × 1 μm size. This unique design will be a key factor in enabling the next generation of AR and VR displays that require ultra-small and compact pixels. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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